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Technology: Si
Configuration: Dual
Mounting Style: Through Hole
Transistor Polarity: PNP
Pd - Power Dissipation: 350 mW
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 60 V
Maximum DC Collector Current: 50 mA
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 250 mV
