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Technology: Si
Unit Weight: 13.745 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 1.2 W
DC Current Gain hFE Max: 75 at 1 A, 5 VDC
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 250 V
Maximum DC Collector Current: 5 A
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 25 at 1 A, 5 VDC
Collector- Emitter Voltage VCEO Max: 200 V
Collector-Emitter Saturation Voltage: 400 mV
