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Technology: Si
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 360 mW
DC Current Gain hFE Max: 800 at 500 uA, 5 V
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 60 V
Maximum DC Collector Current: 50 mA
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 45 at 1 uA, 5 V
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 300 mV
