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Technology: Si
Unit Weight: 7.584 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 420 mW
DC Current Gain hFE Max: 375 at 500 mA, 1 V
Gain Bandwidth Product fT: 170 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 32 V
Continuous Collector Current: 2 A
Maximum DC Collector Current: 2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 160 at 500 mA, 1 V
Collector- Emitter Voltage VCEO Max: 20 V
Collector-Emitter Saturation Voltage: 600 mV
