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Type: Power MOSFET
Vgs(th): 1.3 V
Vgs (Max): 8V
Gate Charge (Qg): 1nC
Power consumption: 700mW
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 75V
Continuous drain current: 300mA
Input Capacitance (Ciss): 40pF
Operating temperature range: -65 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 4Ohm
Drive Voltage (Max Rds On, Min Rds On): 1.8|4.5V
