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Technology: Si
Unit Weight: 4 g
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 62 W
Vgs - Gate-Source Voltage: - 10 V, + 10 V
Id - Continuous Drain Current: 20 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 68 mOhms
Vds - Drain-Source Breakdown Voltage: 55 V
Vgs th - Gate-Source Threshold Voltage: 2 V
