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Fall Time: 25.3 ns, 25.3 ns
Rise Time: 28 ns, 28 ns
Technology: Si
Unit Weight: 112.200 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 24.5 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 68 W
Vgs - Gate-Source Voltage: - 10 V, + 10 V
Typical Turn-On Delay Time: 15.1 ns, 15.1 ns
Typical Turn-Off Delay Time: 31.5 ns, 31.5 ns
Id - Continuous Drain Current: 35 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 9.5 mOhms, 9.5 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 1.4 V
