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Fall Time: 23.1 ns
Rise Time: 22 ns
Technology: Si
Unit Weight: 112.200 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 27.3 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 64 W
Vgs - Gate-Source Voltage: - 15 V, + 15 V
Typical Turn-On Delay Time: 12.6 ns
Typical Turn-Off Delay Time: 39.5 ns
Id - Continuous Drain Current: 26 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 26.6 mOhms
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs th - Gate-Source Threshold Voltage: 1.7 V
