Stay Updated with Offers

Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.

By subscribing, you agree to our Terms of Service and Privacy Policy.

Quick Support

Direct access to our certified experts

Nexperia PBHV8540T-QR BJTs - Bipolar Transistors 500 V, 0.5 A NPN high-voltage low VCEsat transistor

Name: Nexperia PBHV8540T-QR BJTs - Bipolar Transistors 500 V, 0.5 A NPN high-voltage low VCEsat transistor
Brand: Nexperia

ModelPBHV8540T-QR

Contact

Quantity

Secure Checkout

Quality Engagement

Easy change and return

Delivery Available

Technology: Si

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 300 mW

Gain Bandwidth Product fT: 30 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 500 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 10 at 300 mA, 10 V

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 910 mV