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Nexperia PBSS306NX-QX BJTs - Bipolar Transistors 100 V, 5.1 A NPN low VCEsat transistor

Name: Nexperia PBSS306NX-QX BJTs - Bipolar Transistors 100 V, 5.1 A NPN low VCEsat transistor
Brand: Nexperia

ModelPBSS306NX-QX

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Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 2.1 W

Gain Bandwidth Product fT: 110 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 4.5 A

Maximum DC Collector Current: 9 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 40 at 5 A, 2 V

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 170 mV