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Technology: Si
Unit Weight: 20 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 700 mW
DC Current Gain hFE Max: 500 at 1 mA, 5 V
Gain Bandwidth Product fT: 220 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 80 V
Continuous Collector Current: 1 A
Maximum DC Collector Current: 1 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 250 at 1 mA, 5 V
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 200 mV
