Nexperia PBSS4260PANSX BJTs - Bipolar Transistors 60 V, 2 A NPN low VCEsat (BISS) transistor

Technology: Si

Unit Weight: 7.278 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 960 mW

Gain Bandwidth Product fT: 140 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 60 V

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 70 mV