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Width: 1.7 mm
Height: 1 mm
Length: 3.1 mm
Technology: Si
Unit Weight: 11.364 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 600 mW
DC Current Gain hFE Max: 200 at 500 mA, 2V
Gain Bandwidth Product fT: 100 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 60 V
Continuous Collector Current: 3 A
Maximum DC Collector Current: 3 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 290 mV
