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Nexperia PBSS4350D-QX BJTs - Bipolar Transistors 50 V, 3 A NPN low VCEsat transistor

Name: Nexperia PBSS4350D-QX BJTs - Bipolar Transistors 50 V, 3 A NPN low VCEsat transistor
Brand: Nexperia

ModelPBSS4350D-QX

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Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 750 mW

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 3 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 100

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 290 mV