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Nexperia PBSS5220T-QR BJTs - Bipolar Transistors 30 V, 2 A PNP/PNP low VCEsat (BISS) transistor

Name: Nexperia PBSS5220T-QR BJTs - Bipolar Transistors 30 V, 2 A PNP/PNP low VCEsat (BISS) transistor
Brand: Nexperia

ModelPBSS5220T-QR

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Technology: Si

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 480 mW

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 20 V

Continuous Collector Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 150 at - 2 A, - 5 V

Collector- Emitter Voltage VCEO Max: 20 V

Collector-Emitter Saturation Voltage: 225 mV