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Nexperia PBSS8110T-QVL BJTs - Bipolar Transistors 100 V, 1 A NPN low VCEsat transistor

Name: Nexperia PBSS8110T-QVL BJTs - Bipolar Transistors 100 V, 1 A NPN low VCEsat transistor
Brand: Nexperia

ModelPBSS8110T-QVL

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Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 480 mW

DC Current Gain hFE Max: 500

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 120 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 150

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 200 mV