Nexperia PBSS9110X,135 BJTs - Bipolar Transistors 100 V, 1 A PNP low VCEsat (BISS) transistor

Width: 2.6 mm

Height: 1.6 mm

Length: 4.6 mm

Technology: Si

Unit Weight: 40 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 2 W

DC Current Gain hFE Max: 150 at 1 mA, 5 V

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 120 V

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 150 at 1 mA, 5 V, 150 at 250 mA, 5 V, 150 at 500 mA, 5 V, 125 at 1 A, 5 V

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 320 mV