Nexperia PHPT610030NKX BJTs - Bipolar Transistors NPN/PNP high power double bipolar transistor

Width: 4.7 mm

Height: 1.05 mm

Length: 5.3 mm

Technology: Si

Unit Weight: 96.600 mg

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 25 W

Gain Bandwidth Product fT: 140 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 3 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 225 mV