Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Technology: Si
Configuration: Dual
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Polarity: NPN, PNP
Pd - Power Dissipation: 550 mW
DC Current Gain hFE Max: 300 at 150 mA, 10 V
Gain Bandwidth Product fT: 200 MHz, 300 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 60 V, 75 V
Continuous Collector Current: 600 mA
Maximum DC Collector Current: 800 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 100 at 150 mA, 10 V
Collector- Emitter Voltage VCEO Max: 40 V, 60 V
Collector-Emitter Saturation Voltage: 1 V
