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Width: 1.3 mm
Height: 0.6 mm
Length: 1.7 mm
Technology: Si
Unit Weight: 2.700 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN, PNP
Pd - Power Dissipation: 360 mW
DC Current Gain hFE Max: 60 at 100 uA, 1 V
Gain Bandwidth Product fT: 300 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 60 V, 40 V
Continuous Collector Current: 200 mA
Maximum DC Collector Current: 200 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 180
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 120 mV, 165 mV
