Nexperia PMD3001D,115 BJTs - Bipolar Transistors 20 V, dual N-channel Trench MOSFET

Width: 1.7 mm

Height: 1 mm

Length: 3.1 mm

Technology: Si

Unit Weight: 11 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 580 mW

DC Current Gain hFE Max: 830, 640

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 600 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 300

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 360 mV, 400 mV