Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Width: 1.35 mm
Height: 1 mm
Length: 2.2 mm
Technology: Si
Unit Weight: 5 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 200 mW
DC Current Gain hFE Max: 400 at 100 uA, 5 V
Gain Bandwidth Product fT: 100 MHz
Emitter- Base Voltage VEBO: 4.5 V
Collector- Base Voltage VCBO: 30 V
Maximum DC Collector Current: 100 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 400 at 100 uA, 5 V, 450 at 1 mA, 5 V, 400 at 10 mA, 5 V
Collector- Emitter Voltage VCEO Max: 25 V
