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Fall Time: 15 ns
Rise Time: 19 ns
Technology: Si
Unit Weight: 1.280 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Qg - Gate Charge: 6.8 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 1.07 W
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 6 ns
Typical Turn-Off Delay Time: 29 ns
Id - Continuous Drain Current: 2.9 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 8.4 S
Rds On - Drain-Source Resistance: 950 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 400 mV
