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Nexperia PRMD3Z BJTs - Bipolar Transistors 50 V, 100 mA NPN/NPN Resistor-Equipped double Transistors (RET)

Name: Nexperia PRMD3Z BJTs - Bipolar Transistors 50 V, 100 mA NPN/NPN Resistor-Equipped double Transistors (RET)
Brand: Nexperia

ModelPRMD3Z

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Technology: Si

Unit Weight: 2.376 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 480 mW

Gain Bandwidth Product fT: 230 MHz

Emitter- Base Voltage VEBO: 10 V

Collector- Base Voltage VCBO: 50 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 30

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 150 mV