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Gain: 18.5 dB
Technology: Si
Unit Weight: 1.635 g
Output Power: 70 W
Mounting Style: SMD/SMT
Transistor Type: LDMOS FET
Moisture Sensitive: Yes
Number of Channels: 2 Channel
Operating Frequency: 136 MHz to 520 MHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 690 W
Vgs - Gate-Source Voltage: + 12 V
Id - Continuous Drain Current: 8 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Forward Transconductance - Min: 7.3 S
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
