NXP AFV09P350-04NR3 RF Power MOSFET 720-960 MHz 100 W AVG. 48 V
Manufacturer: NXP Model: AFV09P350-04NR3 - Contact
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Gain: 19.2 dB
Technology: Si
Unit Weight: 3.065 g
Output Power: 100 W
Mounting Style: SMD/SMT
Transistor Type: LDMOS FET
Moisture Sensitive: Yes
Number of Channels: 2 Channel
Operating Frequency: 720 MHz to 960 MHz
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: + 10 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Vds - Drain-Source Breakdown Voltage: 105 V
Vgs th - Gate-Source Threshold Voltage: 2.3 V
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