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Technology: GaN-on-SiC
Mounting Style: Screw Mount
Number of Channels: 1 Channel
Pd - Power Dissipation: 165 W
Vgs - Gate-Source Voltage: - 8 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Vds - Drain-Source Breakdown Voltage: 125 V
Vgs th - Gate-Source Threshold Voltage: - 3.1 VDC
