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Gain: 27 dB
Technology: Si
Unit Weight: 3 g
Channel Mode: Enhancement
Output Power: 25 W
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: LDMOS FET
Number of Channels: 1 Channel
Operating Frequency: 1.8 MHz to 2 GHz
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: + 10 V
Id - Continuous Drain Current: 210 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Vds - Drain-Source Breakdown Voltage: 133 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
