OMEGA CY670B-ET Cryogenic Silicon Diode Temperature Sensor (Band B, 226.85 °C)

Mounting: Screw in

Band Type: Band B

Wire Length: 19.304 mm

Sensor Width: 6.096 mm

Output Signal: Voltage

Repeatability: ± 10 mK @ 4.2 K

Sensor Height: 5.556 mm

Wire Diameter: 0.38 mm

Sensor Threads: 6-32

Number of Wires: 2

Reverse Voltage: 60 V

Current, Max Note: 1 mA, continuous or 100 mA, pulsed

Supply Power Effects: 16 µW @ 4.2 K; 10 µW @ 77 K; 5 µW @ 300 K

Thermal Response Time: SD Model: Typical <10 ms @; 4.2 K, 100 ms @ 77 K, 200 ms ;@ 305 K;BR Model: 1 ms @ 4.2 K, ;13 ms @ 77 K, 20 ms @ 305 K

Use in Radiation Note: Recommended for use only in low level radiation

Recommended Excitation: 10 µA, ± 0.1%

Temperature Sensor Type: Silicon Diode

Process Temperature, Max: 226.85 °C

Process Temperature, Min: -271.8 °C

Accuracy Band Availability: 1, 2, 3, 4

Use in Magnetic Field Note: Not recommended for use in magnetic field applications below 60 K; low magnetic field dependence when used in fields up to 5 tesla above 60 K