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Technology: Si
Unit Weight: 4 g
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 800 mW
DC Current Gain hFE Max: 560
Gain Bandwidth Product fT: 390 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 50 V
Continuous Collector Current: - 3 A
Maximum DC Collector Current: 3 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 135 mV
