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Type: Power MOSFET
Vgs (Max): 10V
Gate Charge (Qg): 1.43nC
Power consumption: 150mW
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 30V
Continuous drain current: 100mA
Input Capacitance (Ciss): 7.5pF
Operating temperature range: 150C
Field-effect transistor type: P-CH
Drain to Source on-state resistance: 10.4Ohm
Drive Voltage (Max Rds On, Min Rds On): 1.5|4V
