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onsemi AFGB30T65SQDN IGBT Transistors IGBT 650V FS4 High speed version for OBC application in D2PAK 650V, 30A, D2PAK

Name: onsemi AFGB30T65SQDN IGBT Transistors IGBT 650V FS4 High speed version for OBC application in D2PAK 650V, 30A, D2PAK
Brand: onsemi

ModelAFGB30T65SQDN

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Technology: Si

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Pd - Power Dissipation: 220 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.6 V

Continuous Collector Current at 25 C: 60 A