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onsemi AFGHL75T65SQDC IGBT Transistors IGBT with SiC copack diode IGBT - Hybrid IGBT 650 V

Name: onsemi AFGHL75T65SQDC IGBT Transistors IGBT with SiC copack diode IGBT - Hybrid IGBT 650 V
Brand: onsemi

ModelAFGHL75T65SQDC

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Technology: SiC

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 375 W

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 80 A

Collector-Emitter Saturation Voltage: 1.6 V

Continuous Collector Current at 25 C: 80 A