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onsemi AFGY100T65SPD IGBT Transistors IGBT - 650 V 100 A FS3 for EV traction inverter application IGBT - 650 V 100 A FS3

Name: onsemi AFGY100T65SPD IGBT Transistors IGBT - 650 V 100 A FS3 for EV traction inverter application IGBT - 650 V 100 A FS3
Brand: onsemi

ModelAFGY100T65SPD

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Technology: Si

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 660 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.6 V

Continuous Collector Current at 25 C: 120 A