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Fall Time: 105 ns
Rise Time: 42 nS
Technology: Si
Unit Weight: 7.500 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 1.57 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 800 mW
Vgs - Gate-Source Voltage: - 10 V, + 10 V
Typical Turn-On Delay Time: 18 nS
Typical Turn-Off Delay Time: 190 nS
Id - Continuous Drain Current: 250 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 7.8 Ohms
Vds - Drain-Source Breakdown Voltage: 50 V
Vgs th - Gate-Source Threshold Voltage: 1.3 V
