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onsemi NJVMJD45H11T4G BJTs - Bipolar Transistors 8 A, 80 V PNP Power Bipolar Junction Transistor

Name: onsemi NJVMJD45H11T4G BJTs - Bipolar Transistors 8 A, 80 V PNP Power Bipolar Junction Transistor
Brand: onsemi

ModelNJVMJD45H11T4G

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Technology: Si

Unit Weight: 260.400 mg

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 20 W

Gain Bandwidth Product fT: 90 MHz

Emitter- Base Voltage VEBO: 5 V

Continuous Collector Current: 8 A

Maximum DC Collector Current: 8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 60

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 1 V