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Width: 0.8 mm
Height: 0.37 mm
Length: 0.6 mm
Technology: Si
Unit Weight: 0.450 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 347 mW
Gain Bandwidth Product fT: 200 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 60 V
Maximum DC Collector Current: 200 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 300 mV
