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Width: 4 mm
Height: 1.5 mm
Length: 5 mm
Fall Time: 80 ns, 50 ns
Rise Time: 65 ns, 20 ns
Technology: Si
Unit Weight: 74 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 P-Channel
Qg - Gate Charge: 35 nC
Number of Channels: 2 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 2 W
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 17 ns, 15 ns
Typical Turn-Off Delay Time: 50 ns, 85 ns
Id - Continuous Drain Current: 7.8 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 15 S
Rds On - Drain-Source Resistance: 27 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 1.2 V
