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Width: 29 mm
Height: 5.8 mm
Length: 44.2 mm
Fall Time: 9 ns
Rise Time: 20 ns
Technology: SiC
Configuration: Dual Half-Bridge
Mounting Style: Through Hole
Number of Channels: 4 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 319 W
Vgs - Gate-Source Voltage: - 15 V, + 25 V
Typical Turn-On Delay Time: 17 ns
Typical Turn-Off Delay Time: 30 ns
Id - Continuous Drain Current: 27 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 59 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 4.3 V
