Company Culture
Contact us
Equipment Repair Service
Staff

Event-Exhibition Manufacturer

For customers
Forum
For vendors
Manufacturer
Manufacturer
Notification
Product introduction
User manual

Calibration Service
Equipment Rental Service
Equipment Repair Service
Inspection Service

© 2011 - 2026 EMIN.ASIA. All rights reserved.

Qorvo QPD1010 GaN FETs DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN | EMIN.ASIA

GaN FETs
Qorvo QPD1010 GaN FETs DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN

Stay Updated with Offers

Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.

By subscribing, you agree to our Terms of Service and Privacy Policy.

Quick Support

Direct access to our certified experts

Product image

Qorvo QPD1010 GaN FETs DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN

ManufacturerQorvo(View more products from this manufacturer)

ModelQPD1010

Contact

Quantity

Secure Checkout

Quality Engagement

Easy change and return

Delivery Available

Gain: 24.7 dB

Technology: GaN

Unit Weight: 2.300 g

Output Power: 11 W

Configuration: Single

Mounting Style: SMD/SMT

Development Kit: QPD1010-EVB1

Transistor Type: HEMT

Moisture Sensitive: Yes

Transistor Polarity: N-Channel

Pd - Power Dissipation: 13.5 W

Maximum Operating Frequency: 4 GHz

Minimum Operating Frequency: 0 Hz

Id - Continuous Drain Current: 400 mA

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C

Vgs - Gate-Source Breakdown Voltage: 145 V

Vds - Drain-Source Breakdown Voltage: 50 V

Vgs th - Gate-Source Threshold Voltage: - 2.8 V

Related Products

Qorvo QPD0007TR13 GaN FETs 3.4-3.8GHz 15W 50V GaN Single Channel

Qorvo QPD0007TR13 GaN FETs 3.4-3.8GHz 15W 50V GaN Single Channel

Infineon IGO60R070D1AUMA2 GaN FETs HV GAN DISCRETES

Infineon IGO60R070D1AUMA2 GaN FETs HV GAN DISCRETES

MACOM GTVA261701FA-V1-R2 GaN FETs RF LDMOS FET

MACOM GTVA261701FA-V1-R2 GaN FETs RF LDMOS FET

ROHM Semiconductor BM3G005MUV-LBE2 GaN HEMT Power Stage Nano Cap, EcoGaN, 650V 50mohm 2MHz, GaN HEMT Power Stage IC

ROHM Semiconductor BM3G005MUV-LBE2 GaN HEMT Power Stage Nano Cap, EcoGaN, 650V 50mohm 2MHz, GaN HEMT Power Stage IC

Infineon GS-065-008-1-L-MR GaN FETs 650V, 8A, GaN E-mode, 5x6 PDFN, Bottom-side cooled

Infineon GS-065-008-1-L-MR GaN FETs 650V, 8A, GaN E-mode, 5x6 PDFN, Bottom-side cooled

Infineon GS66502B-MR GaN FETs 650V, 7.5A, GaN E-mode, GaNPX package, Bottom-side cooled

Infineon GS66502B-MR GaN FETs 650V, 7.5A, GaN E-mode, GaNPX package, Bottom-side cooled

Infineon GS-065-030-6-LT-TR GaN FETs CoolGaN Transistor 700 V G4 for ultimate efficiency and reliability

Infineon GS-065-030-6-LT-TR GaN FETs CoolGaN Transistor 700 V G4 for ultimate efficiency and reliability

MACOM CGH40090PP GaN HEMTs GaN HEMT DC-2.5GHz, 90 Watt

MACOM CGH40090PP GaN HEMTs GaN HEMT DC-2.5GHz, 90 Watt

MACOM CGHV1J025D-GP4 GaN HEMTs GaN HEMT Die DC-18GHz, 25 Watt

MACOM CGHV1J025D-GP4 GaN HEMTs GaN HEMT Die DC-18GHz, 25 Watt

MACOM CG2H40035P GaN FETs GaN HEMT, G28V4, 35W, DC-6.0GHz, PILL

MACOM CG2H40035P GaN FETs GaN HEMT, G28V4, 35W, DC-6.0GHz, PILL