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Qorvo TGF2023-2-01 GaN SiC HEMT DC-18GHZ 6W TQGaN25 PAE 71.6% Gain 18dB | EMIN.ASIA

GaN FETs
Qorvo TGF2023-2-01 GaN SiC HEMT DC-18GHZ 6W TQGaN25 PAE 71.6% Gain 18dB

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Qorvo TGF2023-2-01 GaN SiC HEMT DC-18GHZ 6W TQGaN25 PAE 71.6% Gain 18dB

ManufacturerQorvo(View more products from this manufacturer)

ModelTGF2023-2-01

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Gain: 18 dB

Technology: GaN-on-SiC

Unit Weight: 739.600 mg

Output Power: 6 W

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Maximum Operating Frequency: 18 GHz

Minimum Operating Frequency: 0 Hz

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