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Technology: GaN-on-SiC
Unit Weight: 64.190 g
Output Power: 100 W
Mounting Style: Screw Mount
Moisture Sensitive: Yes
Transistor Polarity: N-Channel
Pd - Power Dissipation: 144 W
Vgs - Gate-Source Voltage: - 7 V, + 2 V
Maximum Operating Frequency: 3.5 GHz
Minimum Operating Frequency: 0 Hz
Id - Continuous Drain Current: 12 A
Maximum Operating Temperature: + 85 C
Minimum Operating Temperature: - 40 C
Vds - Drain-Source Breakdown Voltage: 28 V
Vgs th - Gate-Source Threshold Voltage: - 2.9 V
