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IS: 3
EPC: M8.15E
Size: 4.9X3.9X0.00mm
Type: SOICN
Pitch: 1.3mm
Width: 3.9mm
Length: 4.9mm
RDS (ON): 2.7
Fall Time: 0.015ns
Gate type: IGBT
Rise Time: 14.5
Thickness: 0
Category 2: Power FET/CCD Drivers
Input type: Non-inverted
VBIAS(Min): 4.5
Channel Fit: Synchronization
Constitution: High Side or Low Side
Voltage (UL): 0.8|2.4V
Mounting Type: Surface Mount
Turn On Delay: 10
Rise/Fall Time: 14.5|15ns
Supply voltage: 4.5 to 16.5V
Turn Off Delay: 9.5
Input Signal(Min): 0
Number of drivers: 1
Input Signal (Max): 16
Input Signal Range: 0 to VP
Input Supply (Max): 16.5-16.5
Input Supply Range: 4.5 to 16.5
Input Voltage (Max): 16.5V
Operating Freq(Max): 40MHz
Output Signal (Max): 16
Output Signal (Min): -5
Output Signal Range: -5 to 16
Qualification Level: Standard
Operating temperature: --40 to 125C
Maximum output current: 3.5|3.5A
Peak Output Current IPK: 3.5
Operating temperature range: -40 to 85C
Maximum operating temperature: 85C
Minimum operating temperature: -40C
Number of poles of the contact point: 8
