Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Width: 9.15 mm
Height: 4.9 mm
Length: 10 mm
Fall Time: 14 ns
Rise Time: 19 ns
Technology: Si
Unit Weight: 4 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: N-Channel MOS Field Effect Transistor
Qg - Gate Charge: 196 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 348 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 38 ns
Typical Turn-Off Delay Time: 140 ns
Id - Continuous Drain Current: 110 A
Maximum Operating Temperature: + 175 C
Rds On - Drain-Source Resistance: 1.75 mOhms
Vds - Drain-Source Breakdown Voltage: 55 V
Vgs th - Gate-Source Threshold Voltage: 4 V
