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Fall Time: 9.9 us
Rise Time: 12.8 us
Technology: Si
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 40 W
Vgs - Gate-Source Voltage: - 2.5 V, + 16 V
Typical Turn-On Delay Time: 3 us
Typical Turn-Off Delay Time: 4 us
Id - Continuous Drain Current: 34 A
Maximum Operating Temperature: + 150 C
Forward Transconductance - Min: 12 S
Rds On - Drain-Source Resistance: 37 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
