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Fall Time: 1.9 us
Rise Time: 3.1 us
Technology: Si
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 3 W
Vgs - Gate-Source Voltage: - 2.5 V, + 16 V
Typical Turn-On Delay Time: 1.4 us
Typical Turn-Off Delay Time: 3.6 us
Id - Continuous Drain Current: 1.5 A
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 250 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
