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Width: 1.6 mm
Height: 0.85 mm
Length: 2.9 mm
Technology: Si
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 500 mW
DC Current Gain hFE Max: 120 at 100 mA, 2 V
Gain Bandwidth Product fT: 300 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 60 V
Continuous Collector Current: - 2 A
Maximum DC Collector Current: 2 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 120
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 200 mV
