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ROHM Semiconductor BM63363S-VC 3-Phase IGBT IPM 600V 10A HSDIP25VC | EMIN.ASIA

Discrete & Power Modules
ROHM Semiconductor BM63363S-VC 3-Phase IGBT IPM 600V 10A HSDIP25VC

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ROHM Semiconductor BM63363S-VC 3-Phase IGBT IPM 600V 10A HSDIP25VC

ManufacturerROHM Semiconductor(View more products from this manufacturer)

ModelBM63363S-VC

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Technology: Si

Unit Weight: 4 mg

Mounting Style: Through Hole

Pd - Power Dissipation: 33 W

Maximum Operating Temperature: + 100 C

Minimum Operating Temperature: - 25 C

Collector- Emitter Voltage VCEO Max: 600 V

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