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Technology: Si
Unit Weight: 8 mg
Mounting Style: SMD/SMT
Transistor Polarity: NPN
DC Current Gain hFE Max: 360 at 2 mA, 1 V
Gain Bandwidth Product fT: 300 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 30 V
Continuous Collector Current: 200 mA
Maximum DC Collector Current: 200 mA
DC Collector/Base Gain hfe Min: 120
Collector-Emitter Saturation Voltage: 300 mV
