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ROHM Semiconductor RGC80TSX8RGC11 IGBT Transistors RGC80TSX8R is the reverse conducting IGBT. The datasheet is coming soon.

Name: ROHM Semiconductor RGC80TSX8RGC11 IGBT Transistors RGC80TSX8R is the reverse conducting IGBT. The datasheet is coming soon.
Brand: ROHM Semiconductor

ManufacturerROHM Semiconductor(View more products from this manufacturer)

ModelRGC80TSX8RGC11

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Technology: Si

Unit Weight: 11.535 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 535 W

Gate-Emitter Leakage Current: 200 nA

Maximum Gate Emitter Voltage: 30 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.8 kV

Collector-Emitter Saturation Voltage: 5 V

Continuous Collector Current at 25 C: 80 A